Advantages and disadvantages of PECVD

Advantages:

Low base temperature; Rapid deposition rate; Good film forming quality, less pinhole, not easy to crack.

Disadvantages:

1. Large investment in equipment, high cost and high requirement for gas purity;

2. The excessive noise, strong light radiation, harmful gas and metal steam dust generated during coating process are harmful to human body;

3. It is difficult to coat the inner surface of the small hole.

4. Tail gas generated after deposition is not easy to deal with.

Example: in the PECVD process, when electrons moving at high speed in the plasma collide with neutral reactive gas molecules, the neutral reactive gas molecules become fragmented or in an active state, which makes them easy to react. Substrate temperature is usually kept at 350 ℃ or so you can get good SiOx or SiNx thin film, can be a passivation layer, integrated circuit and finally improve the reliability of integrated circuits.